Electrochemically Prepared Grain Boundaries Free Few-layer Graphene Sheets for Applications in Transport-based Devices

Abstract

Graphene is an excellent material due to its outstanding physical properties, applicable in high-speed electronic devices due to its higher mobility. However, experimentally obtained mobility is far lower than an expected value which depends on the quality of the graphene. Graphene prepared by the electrochemical (EC) method is better in quality in terms of its physical properties than graphene prepared by other methods. Though there are reports of good qualities of graphene prepared by the EC method, the quality in terms of grain boundaries (GBs) and its electrical properties have not been investigated in detail yet. Enhancement of electrical properties and modulation of mobility of graphene could be realized in field-effect transistors (FET) using different gate materials. Therefore, in this presentation, GBs and their electrical properties, intrinsic mobility using various substrates, such as conventional low-k and high-k dielectric, ferroelectric, and doped-ferroelectric as a gate based on the transport properties of graphene prepared by the EC method have been discussed. The research finding suggests the potential application of graphene prepared by the EC method in future high-speed electronics.