Synthesis and characterisation of BaBi4Ti4O15

Abstract

Bi-based Aurivillius family of compounds have received considerable attention as materials for ferroelectric random access memory (FRAM) because of their low operating voltage, field, superior polarization fatigue resistant characteristics and high Curie temperature . A large remnant polarization, low coercive field and high Curie temperature are required for better performance of FRAM devices. Barium-Bismuth titanate, BaBi4Ti4O15 (BBT), a member of aurivillius bismuth based layer structure Perovskite was prepared from solid state method of low energy ball-milling process. The XRD analysis of calcined powders confirms the single phase formation. SEM was taken for sintered pellet of different duration to study the surface morphology. The microscopic image supposed Ba+2addition leads to changes in the microstructural development, particularly in the change of the average grain size. Dielectric measurement is carried out to confirm its relaxor behaviour.