Swain, Somalina (2012) Electronic properties of GaAs and Hubbard interaction in transition metal oxide. MSc thesis.
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Abstract
Electronic properties of GaAs semiconductor is studied using Local Density Approximation within Quantum Espresso method. GaAs is found to be a direct band gap semiconductor with band gap 1.22eV. The effect of Hubbard interaction on the absolute magnetization of FeO & MnO are also studied.
| Item Type: | Thesis ( MSc) |
|---|---|
| Uncontrolled Keywords: | solid state physics |
| Subjects: | Physics > Condensed Matter |
| Divisions: | Sciences > Department of Physics |
| ID Code: | 3807 |
| Deposited By: | swain somalina |
| Deposited On: | 15 May 2012 14:43 |
| Last Modified: | 15 May 2012 14:43 |
| Supervisor(s): | Ganguli, B |
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