Swain, Somalina (2012) Electronic properties of GaAs and Hubbard interaction in transition metal oxide. MSc thesis.
Electronic properties of GaAs semiconductor is studied using Local Density Approximation within Quantum Espresso method. GaAs is found to be a direct band gap semiconductor with band gap 1.22eV. The effect of Hubbard interaction on the absolute magnetization of FeO & MnO are also studied.
|Item Type:||Thesis ( MSc)|
|Uncontrolled Keywords:||solid state physics|
|Subjects:||Physics > Condensed Matter|
|Divisions:||Sciences > Department of Physics|
|Deposited By:||swain somalina|
|Deposited On:||15 May 2012 14:43|
|Last Modified:||15 May 2012 14:43|
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