A Study of Processing of Indium Doped Semiconductor Material

Abstract

Indium- doped Silicon is being investigated as an extrinsic photoconductor material for use in the 3 to 5 µm infrared region. The low indium concentration obtained by standard growth methods and presence of a shallower defect level associated with the indium. The concentration of indium in float zone grown crystals is generally even lower than this because of the low segregation co-efficient of indium. A shallower defect Centre associated with indium and labelled as indium. It is observed that in Hall co-efficient measurements at energy of about 0.11eV. Solution growth techniques such as gradient –transport solution growth and LPE have been used to grow III – V compound. The use of temperature – gradient zone melting as a means of producing large area p – n junctions in silicon. An important feature of this solution growth procedure is that the crystals are grown the melting point of silicon.so the retrograde solubility of the impurities can be used to obtain very heavily doped crystals. In the present work Indium is doped on silicon metal inside a micro-oven at the temperature of 2000C.Different samples are kept inside the micro-oven for different time period. After that XRD,SEM and V-I characteristics have been done, then voltage drop is calculated and different peaks have come and changes in micro structure have been found.