Sahoo, Gouri Sankar and Behera, Manoranjan (2013) Atlas simulation based study of recessed source/drain SOI mosfets. BTech thesis.
Front gate and back gate threshold voltage, potential distributions and sub threshold swing of recessed source/drain ultra-thin body silicon on insulator mosfets are simulated and analyzed in a vivid manner with extreme meticulousness. Analysis and comparative study of the electrical characteristics of Re s/d UTB SOI mosfets with that of conventional FD SOI mosfets has been done. Structures of conventional soi mosfet and Re s/d mosfets is simulated with the help of software like ATLAS.
|Item Type:||Thesis (BTech)|
|Uncontrolled Keywords:||conventional mosfet; soi mosfets ; recessed source/drain soi mosfet|
|Subjects:||Engineering and Technology > Electronics and Communication Engineering > VLSI|
|Divisions:||Engineering and Technology > Department of Electronics and Communication Engineering|
|Deposited By:||Hemanta Biswal|
|Deposited On:||29 Oct 2013 11:29|
|Last Modified:||20 Dec 2013 09:39|
|Supervisor(s):||Tiwari, P K|
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