Sahoo, Gouri Sankar and Behera, Manoranjan (2013) Atlas simulation based study of recessed source/drain SOI mosfets. BTech thesis.
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Abstract
Front gate and back gate threshold voltage, potential distributions and sub threshold swing of recessed source/drain ultra-thin body silicon on insulator mosfets are simulated and analyzed in a vivid manner with extreme meticulousness. Analysis and comparative study of the electrical characteristics of Re s/d UTB SOI mosfets with that of conventional FD SOI mosfets has been done. Structures of conventional soi mosfet and Re s/d mosfets is simulated with the help of software like ATLAS.
| Item Type: | Thesis (BTech) |
|---|---|
| Uncontrolled Keywords: | conventional mosfet; soi mosfets ; recessed source/drain soi mosfet |
| Subjects: | Engineering and Technology > Electronics and Communication Engineering > VLSI |
| Divisions: | Engineering and Technology > Department of Electronics and Communication Engineering |
| ID Code: | 4712 |
| Deposited By: | Hemanta Biswal |
| Deposited On: | 29 Oct 2013 11:29 |
| Last Modified: | 20 Dec 2013 09:39 |
| Supervisor(s): | Tiwari, P K |
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