Atlas simulation based study of recessed source/drain SOI mosfets

Sahoo, Gouri Sankar and Behera, Manoranjan (2013) Atlas simulation based study of recessed source/drain SOI mosfets. BTech thesis.



Front gate and back gate threshold voltage, potential distributions and sub threshold swing of recessed source/drain ultra-thin body silicon on insulator mosfets are simulated and analyzed in a vivid manner with extreme meticulousness. Analysis and comparative study of the electrical characteristics of Re s/d UTB SOI mosfets with that of conventional FD SOI mosfets has been done. Structures of conventional soi mosfet and Re s/d mosfets is simulated with the help of software like ATLAS.

Item Type:Thesis (BTech)
Uncontrolled Keywords:conventional mosfet; soi mosfets ; recessed source/drain soi mosfet
Subjects:Engineering and Technology > Electronics and Communication Engineering > VLSI
Divisions: Engineering and Technology > Department of Electronics and Communication Engineering
ID Code:4712
Deposited By:Hemanta Biswal
Deposited On:29 Oct 2013 11:29
Last Modified:20 Dec 2013 09:39
Supervisor(s):Tiwari, P K

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