Pradhan, Priyambada (2013) Growth and Characterizations of Silicon nitride thin films on Silicon substrates. MSc thesis.
Silicon nitride thin films were prepared on Silicon p-type substrates using chemical vapor deposition method. Three Silicon nitride samples were taken. One was not annealed while the rest two were annealed at different temperatures. The films are of 250 nm. Two Si3N4 samples were annealed at 800 oC and 1000 oC in a furnace in the presence of N2. The samples morphological characterizations are done using XRD and SEM. And electrical characterizations are done using C-V. XRD and SEM confirmed its amorphous nature. Electrical properties were found out by capacitance-voltage measurement (C-V).
|Item Type:||Thesis ( MSc)|
|Uncontrolled Keywords:||Silicon nitride, thin film, chemical vapor deposition, MIS structure, Gate voltage|
|Subjects:||Physics > Condensed Matter|
|Divisions:||Sciences > Department of Physics|
|Deposited By:||Hemanta Biswal|
|Deposited On:||05 Dec 2013 15:03|
|Last Modified:||05 Dec 2013 15:03|
|Supervisor(s):||Kar, J P and Kumar, P|
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