Growth and Characterizations of SiO2 thin films on Silicon substrates

Abstract

SiO2 thin films were prepared on Silicon n-type substrates using thermal oxidation method in a horizontal oxide furnace at 1000 oC. Three SiO2 samples were taken. One was not annealed while the rest two were annealed at different temperatures. The films are of 300 nm. Two SiO2 samples were annealed at 800 oC and 1000 oC in a furnace in the presence of N2. The samples morphological characterizations are done using XRD and SEM. And electrical characterizations are done using C-V and I-V. XRD and SEM confirmed its amorphous nature. Electrical properties were found out by C-V and I-V.