Atlas simulation based study of SOI tunnel fet

Kumar, S and Majhi, K K (2014) Atlas simulation based study of SOI tunnel fet. BTech thesis.



It is observed that there are basically two limitations with the conventional mosfet, especially sub-threshold swing swings. Its minimum value being 60 mv/decade. But we cannot decrease it lesser. In order to decrease sub-threshold further, we use tunnel fet to reduce swing to some-what less value than conventional mosfet. It works on tunnelling effect.

Item Type:Thesis (BTech)
Uncontrolled Keywords:Band to band tunnelling , sub-threshold swing
Subjects:Engineering and Technology > Electronics and Communication Engineering > VLSI
Divisions: Engineering and Technology > Department of Electronics and Communication Engineering
ID Code:5615
Deposited By:Hemanta Biswal
Deposited On:21 Jul 2014 14:05
Last Modified:21 Jul 2014 14:05
Supervisor(s):Tiwari, P K

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