Kumar, S and Majhi, K K (2014) Atlas simulation based study of SOI tunnel fet. BTech thesis.
It is observed that there are basically two limitations with the conventional mosfet, especially sub-threshold swing swings. Its minimum value being 60 mv/decade. But we cannot decrease it lesser. In order to decrease sub-threshold further, we use tunnel fet to reduce swing to some-what less value than conventional mosfet. It works on tunnelling effect.
|Item Type:||Thesis (BTech)|
|Uncontrolled Keywords:||Band to band tunnelling , sub-threshold swing|
|Subjects:||Engineering and Technology > Electronics and Communication Engineering > VLSI|
|Divisions:||Engineering and Technology > Department of Electronics and Communication Engineering|
|Deposited By:||Hemanta Biswal|
|Deposited On:||21 Jul 2014 14:05|
|Last Modified:||21 Jul 2014 14:05|
|Supervisor(s):||Tiwari, P K|
Repository Staff Only: item control page