Sahu, Debashish and Tirkey, Ashish Kumar (2014) Design and simulation of double gate fets using atlas. BTech thesis.
In this project we have numerically simulated DOUBLE GATE FETs structure through ATLAS device simulator. Analysis and comparative study of the electrical characteristics of DOUBLE GATE FETs with that of conventional SOI MOSFETs has been done. As CMOS scaling is approaching the limits imposed by oxide tunneling and voltage non-scaling, DOUBLE GATE FETs has become a important part of VLSI research. An analytical model is developed using ATLAS simulator to analyze short channel effects (SCE), potential distributions, impact ionization ,ion scattering ,hot electron effect ,sub threshold swing,. Complete structure was designed and all possible errors were optimized.
|Item Type:||Thesis (BTech)|
|Uncontrolled Keywords:||Soi mosfet;Double gate fet;Sub threshold swing;Short channel effect|
|Subjects:||Engineering and Technology > Electronics and Communication Engineering > VLSI|
|Divisions:||Engineering and Technology > Department of Electronics and Communication Engineering|
|Deposited By:||Hemanta Biswal|
|Deposited On:||21 Aug 2014 16:51|
|Last Modified:||21 Aug 2014 16:51|
|Supervisor(s):||Tiwari, P K|
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