Study of electronic properties of III-V semiconductors and semiconductor-superlattices

Nayak, B K (2014) Study of electronic properties of III-V semiconductors and semiconductor-superlattices. MSc thesis.

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Abstract

We have studied different methods for calculating band structures of solids and their density of states which can predict the electronic properties of solids accurately. Especially, computational methods like tight binding approximation and pseudo potential method have been studied and applied to find the band structures and density of states of semiconductors and its superlattices. The project work is divided into two parts. In first part, pseudo potential method has been used to solve computationally by MATLAB, the energy Eigen values of III-V semiconductors like GaAs and AlAs and IV semiconductor i.e. Ge and get a graphical representation of their band structures. In second part, TB-LMTO program which uses tight binding method has been applied to find the band structures and density of states of GaAs and AlAs semiconductors and their superlattices (GaAs/AlAs). A comparison of conducting behaviour of these materials is made finally.

Item Type:Thesis ( MSc)
Uncontrolled Keywords:TB-LMTO, Pseudo potential, gallium arsenide, aluminium arsenide, superlattice, subband, density of states, band structures
Subjects:Physics > Condensed Matter
Divisions: Sciences > Department of Physics
ID Code:5925
Deposited By:Hemanta Biswal
Deposited On:21 Aug 2014 16:22
Last Modified:21 Aug 2014 16:22
Supervisor(s):Ganguli, B

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