Pradhani, Neeha (2014) Fabrication and characterizations of zirconium based high k dielectric thin film by wet chemical method. MSc thesis.
Zirconium thin films on glass, single-crystal silicon p-type (100), substrates have been prepared from zirconium oxychloride octahydrate and ethanol. The resulting ZrO2 films have bandgap width 4.01 eV and average thickness of the Zirconium oxide film was estimated as 108 nm from UV-visible study.The samples morphological characterizations are done using FESEM and electrical characterizations are done using Capacitance-Voltage measurements.
|Item Type:||Thesis ( MSc)|
|Uncontrolled Keywords:||Zirconium Oxide, thin film, Spin coating, MOS structure, Gate voltage|
|Subjects:||Physics > Condensed Matter|
|Divisions:||Sciences > Department of Physics|
|Deposited By:||Hemanta Biswal|
|Deposited On:||11 Sep 2014 16:34|
|Last Modified:||11 Sep 2014 16:34|
|Supervisor(s):||Kar, J P|
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