Fabrication and characterizations of zirconium based high k dielectric thin film by wet chemical method

Abstract

Zirconium thin films on glass, single-crystal silicon p-type (100), substrates have been prepared from zirconium oxychloride octahydrate and ethanol. The resulting ZrO2 films have bandgap width 4.01 eV and average thickness of the Zirconium oxide film was estimated as 108 nm from UV-visible study.The samples morphological characterizations are done using FESEM and electrical characterizations are done using Capacitance-Voltage measurements.