Performance Analysis of Single Gate and Double Gate MOSFET with and without Effect of Noise

Abstract

In modern era, computing systems are designed to perform innumerable number of functions with high speed, low power consumption, less propagation delay, the number of circuits in a chip keeps increasing day by day. So, the electronics industry always faces the challenge of miniaturization of transistors which increases the package density and hence linear scaling of CMOS technology has become a necessity in the present day microelectronic and nano-electronic regime. This causes a problem for static power consumption and hence conventional MOSFETs fail to face the situation. Also Short Channel Effects (SCEs) come into picture while scaling the MOSFET. Hence non-conventional devices started gaining its significance to meet the ITRS requirements. This thesis explains the performance analysis of Single Gate and Double Gate MOSFET with presence of noise. The performance of the MOSFET degrades when different noises come in to picture as compared to the previous MOSFET Model without noise. Also the behaviour of radio frequency (RF) DG MOSFET is analysed and verified up to 1MHz with measurements over a wide range of bias voltages and channel lengths. Significant variation in the noise spectral density has been observed.