Wali, Abdul (2015) Atlas Simulation Based Performance Study of Fully-Depleted Dual-Material-Gate Silicon on Insulator MOSFETs. BTech thesis.
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Abstract
In this project the characteristics of fully depleted dual metal gate silicon on insulator is studied and presented, the result is compared with that of single material gate MOSFET the result indicates that short channel effect reduces in dual material gate MOSFET.Moreover the electrical characteristics of MOSFET can be controlled by gate length and work function engineering. So this work shows better performance of dual material gate with compare to that of single material gate silicon on insulator
| Item Type: | Thesis (BTech) |
|---|---|
| Uncontrolled Keywords: | Fully depelted MOSFET |
| Subjects: | Engineering and Technology > Electronics and Communication Engineering > VLSI |
| Divisions: | Engineering and Technology > Department of Electronics and Communication Engineering |
| ID Code: | 7481 |
| Deposited By: | Mr. Sanat Kumar Behera |
| Deposited On: | 13 May 2016 10:08 |
| Last Modified: | 13 May 2016 10:08 |
| Supervisor(s): | Tiwari , P K |
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