Fabrication and Characterization of ZnO Thin Film Based p-n Junction

Abstract

Zinc Oxide (ZnO) thin films have drawn considerable interest due to its excellent material properties such as wide and direct band gap, high electron mobility and large exciton binding energy. In order to realise the applications of these devices, fabrication of high quality p-type ZnO thin films are very essential. In this work p-ZnO/n-ZnO and p-ZnO/n-Si type of junctions were realised by depositing the (Al, N) doped p-ZnO films on glass and silicon substrate using low cost sol gel as well as dip coating techniques. The characterization of deposited thin films was carried out by XRD, UV visible spectroscopy, and I-V measurements. For qualitative confirmation for p-type conduction of deposited ZnO thin film hot probe method is utilised. A comparative study of the different p-n junctions was done, where homo-junction between p-ZnO (dip coated) and n-ZnO(sputtered) shows a better diode characterises.