FinFET Based Frequency Synthesizer: Comparative Analysis with MOSFET

Abstract

As the scaling of the MOSFET increases due to Moore’s law the density of the circuits which are fabricating on a Si-chip is increasing, which reduces the cost and improves IC performance up to a certain limit. But if we go beyond 50nm technology nodes then the power consumption is increasing due to leakage currents caused by short channel effects. FinFET is the better alternative to MOSFET technology if we enter into the low nanometer technology nodes which reduces short channel effects and thereby reduces leakage power consumption of the circuits. In this thesis, a frequency synthesizer is designed using FinFET. A Frequency Synthesizer is an essential electronic circuit which can be used in up conversion and down conversion of frequencies in wireless communication systems. As the scaling of the MOSFET increases due to Moore’s law the density of the circuits which are fabricating on a Si-chip is increasing, which reduces the cost and improves IC performance up to a certain limit. But if we go beyond 50nm technology nodes then the power consumption is increasing due to leakage currents caused by short channel effects. FinFET is the better alternative to MOSFET technology if we enter into the low nanometer technology nodes which reduces short channel effects and thereby reduces leakage power consumption of the circuits. In this work, a Frequency Synthesizer is designed which generates frequency twice the reference frequency by using 20nm FinFET Predictive technology model files in cadence virtuoso. Frequency synthesizer is also designed using 7nm FinFET PTM technology, 180nm and 65nm CMOS technology and compared their power consumptions.