Browse by Supervisors

Sarangi, Santunu (2013) A Rigorous Simulation Based Study of Gate Misalignment Effects in Gate Engineered Double-Gate (DG) MOSFETs. MTech thesis.

Anandmoya, Santra Abirmoya (2013) A Subthreshold Analysis of Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs. MTech thesis.

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Bhushan, Shiv (2013) An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates. MTech thesis.

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Gourav , Tuhinansu (2015) Doping Dependent Subthreshold Swing Modelling of Quadruple Gate MOSFETs. MTech thesis.

K

Kumar, Ajit (2014) Modeling and simulation of subthreshold characteristics of fully-depleted recessed-source/drain UTB SOI MOSFETs including substrate induced surface potential effects. MTech thesis.

Kumar, Mukesh (2015) Some Studies on Si-nanotube Based FETs. MTech thesis.

Kushwaha, Mukesh Kumar (2015) Threshold Voltage Modeling of Recessed Source/Drain Soi Mosfet with Vertical Gaussian Doping Profile. MTech thesis.

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Medhi , S (2014) Atlas based simulation study of junctionless double gate (DG) tunnel FET. MTech thesis.

Mathew, S (2014) Performance analysis of Dual Material Gate (DMG) Silicon on Insulator (SOI) tunnel fets. MTech thesis.

Mukhopadhyay , A K (2014) Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. MTech thesis.

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Padhy, Santosh Kumar (2015) Effects of Finger Width & Finger Spacing on the Electrical Performance of W/CDS Based MSM Photodetector. MTech thesis.

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Raju, G (2014) ATLAS simulation based characterization of Recessed-S/D FD SOI MOSFETs with non-uniform lateral doping. MTech thesis.

S

Sai, Sunkara Thandava Sesha Talpa (2015) Subthreshold Modeling and Simulation of Silicon Nanotube Field Effect Transistors (SiNTFETs). MTech thesis.